MBCFET

Overview

MBCFET (Multi-Bridge-Channel Field-Effect Transistor) is Samsung's trade name for their specific implementation of the Gate-All-Around (GAA) transistor architecture, which they introduced for the 3nm process node

It is widely considered the next major evolution in transistor design after FinFET.

How MBCFET Works (Nanosheet Technology)

The main distinguishing feature of MBCFET is the use of horizontally stacked nanosheets for the channel instead of the nanowires or vertical fins used in other architectures

  • The Channel: The transistor channel is formed by multiple layers of flat, thin silicon sheets (nanosheets) stacked vertically, connected in parallel.
  • Gate-All-Around Control: The gate material completely surrounds each of these nanosheets individually (hence "Gate-All-Around"), providing the ultimate electrostatic control over the channel.

MBCFET'sCore Advantages

MBCFET's nanosheet design provides significant benefits over the traditional FinFET, overcoming its limitations in scaling and performance:

  1. Flexible Channel Width (The Key Differentiator): Unlike FinFET, where the channel width is limited by the fixed height of the vertical fin, the width of the nanosheets can be adjusted
    • Impact: This design flexibility allows engineers to fine-tune the transistor's characteristics—optimizing for high performance (wider sheets for more current) in some circuit blocks and low power (narrower sheets) in others. This is a critical advantage for modern chip design.
  2. Increased Performance and Current Drive (ION): Stacking the nanosheets vertically allows a larger effective channel width (Weff) in the same small footprint (area) compared to FinFET, which must add fins horizontally. A larger channel width directly translates to a higher drive current and better performance
  3. Better Power Efficiency: The superior gate control over all four sides of the channel significantly reduces leakage current (current that flows when the transistor is in the OFF state), which translates to lower power consumption. Samsung has cited potential reductions in power consumption by up to 45% compared to the prior 5nm FinFET process

Samsung successfully began mass production of chips using the 3nm MBCFET™ process in 2022

Links of Interest